| 摘要 |
PROBLEM TO BE SOLVED: To provide a magnetic memory cell which is formed by introducing a closed magnetic path structure into a ferromagnetic layer which is a memory layer and a magnetic memory device which retains cell density without degradation by using the magnetic memory cell. SOLUTION: The magnetic memory cell 11 has an antiferromagnetic layer 21, a ferromagnetic layer 22 which is disposed on the antiferromagnetic layer 21, exhibits intra-surface magnetization and makes exchange bonding with the antiferromagnetic layer 21, an insulating layer 23 which is disposed on the ferromagnetic layer 22, a ferromagnetic layer 24 which is disposed on the insulating layer 23 and exhibits the intra-surface magnetization and a closed magnetic path layer 25 which is disposed on the ferromagnetic layer 24 and forms a closed magnetic path together with the ferromagnetic layer 24. The magnetic memory device is embodied by arranging such magnetic memory cells 11 to a grid form or zigzag form.
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