发明名称 |
SOLUTION MATERIAL FOR UNDERLAYER FILM AND PATTERN FORMING METHOD USING THE SAME |
摘要 |
PROBLEM TO BE SOLVED: To provide a solution material for an underlayer film having etching resistance and an antistatic effect and capable of forming a film by a coating method, and a pattern forming method using the solution material. SOLUTION: The solution material contains at least one selected from the group comprising organic compounds each having >=85 wt.% carbon content per one molecule and metallic compounds and a surfactant. The pattern forming method has a step for forming an underlayer film on a film to be worked by coating the top of the film to be worked with the solution material, a step for forming a resist film on the underlayer film and a step for forming a resist pattern by patternwise exposing the resist film. |
申请公布号 |
JP2001272788(A) |
申请公布日期 |
2001.10.05 |
申请号 |
JP20000085109 |
申请日期 |
2000.03.24 |
申请人 |
TOSHIBA CORP |
发明人 |
SATO YASUHIKO;ONISHI KIYONOBU |
分类号 |
G03F7/11;G03F7/004;H01L21/027 |
主分类号 |
G03F7/11 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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