发明名称 MULTI-STAGE LEVEL SHIFT CIRCUIT AND SEMICONDUCTOR DEVICE USING IT
摘要 PROBLEM TO BE SOLVED: To solve problems that a conventional level shift circuit converting signals with different power supplies in a semiconductor integrated circuit employing many kinds of power supplies is deteriorated in characteristics such as the response and low current consumption at a low voltage or at a high voltage difference among different power supplies and has had a difficulty of the configuration by means of combinations of transistors(TRs) of the same size such as a gate array. SOLUTION: The level shift circuit employs basic level shift circuits, receives different voltages from a MOS diode power supply circuit, converts voltages of a reasonable range and obtains a voltage signal with a final objective voltage through the repetitive conversions as above. Since the respective conversions are conducted within the rational voltage range not causing contention, the level shift circuit with high response and a low consumed current can be realized even at a low voltage and a high voltage difference. Since no contention takes place and the circuit can easily be configured even with combinations of the identical TRs, the circuit of this invention can easily cope with various specifications even through the use of existing gate arrays on market.
申请公布号 JP2001274674(A) 申请公布日期 2001.10.05
申请号 JP20000084877 申请日期 2000.03.24
申请人 SEIKO EPSON CORP 发明人 HASHIMOTO MASAMI
分类号 H01L27/04;H01L21/82;H01L21/822;H01L27/118;H03K19/0185;(IPC1-7):H03K19/018 主分类号 H01L27/04
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