SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device having structure of preventing floating capacitance so that high frequency characteristics do not deteriorate and to provide a manufacturing method. SOLUTION: AMOS transistor formed on a silicon substrate 1 is included. An impurity diffusion layer 9 for giving potential to a well in such a way that the MOS transistor is surrounded is connected to a third metal wiring layer 14 at an upper layer through plug electrodes 11a, 11b and 11c arranged into an array form. A third metal wiring layer 14 is fixed to the ground potential (ground).