| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a semiconductor device having a Schottky electrode which has small forward voltage rise and small reverse leakage current. SOLUTION: The semiconductor device comprises a Schottky electrode made of chrome on an n-type silicon carbide substrate and a metal for preventing oxidation of chrome, concretely a metal containing any of nickel, gold and platinum group.</p> |
