发明名称 |
Semiconductor manufacturing apparatus and method of processing semiconductor wafer using plasma, and wafer voltage probe |
摘要 |
A semiconductor manufacturing apparatus includes a unit for generating a plasma in a vacuum chamber, a wafer stage for holding a semiconductor wafer introduced into the vacuum chamber, a high frequency power supply for applying a high frequency voltage to the wafer stage, a wafer voltage probe for measuring a voltage of the semiconductor wafer at a rear surface of the semiconductor wafer, a current and voltage probe for measuring at least one of a voltage and a current applied to the wafer stage from the high frequency power supply, and a control portion. The control portion obtains an impedance from the semiconductor wafer to earth through the plasma on the basis of a voltage value of the semiconductor wafer measured by the wafer voltage probe, and a voltage value or a current value measured by the current and voltage probe, and performs a processing based on the obtained impedance.
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申请公布号 |
US2001025691(A1) |
申请公布日期 |
2001.10.04 |
申请号 |
US20010799527 |
申请日期 |
2001.03.07 |
申请人 |
KANNO SEIICHIRO;NISHIO RYOJI;TETSUKA TSUTOMU;TANAKA JUNICHI;YAMAMOTO HIDEYUKI;IKENAGA KAZUYUKI;KANAI SABUROU |
发明人 |
KANNO SEIICHIRO;NISHIO RYOJI;TETSUKA TSUTOMU;TANAKA JUNICHI;YAMAMOTO HIDEYUKI;IKENAGA KAZUYUKI;KANAI SABUROU |
分类号 |
H01L21/66;H01J37/32;H01L21/311;(IPC1-7):H01L21/306 |
主分类号 |
H01L21/66 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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