| 摘要 |
<p>A B-doped Si1-x-y Gex Cy layer (102) (0<x<1, 0.01≤<1) is epitaxial-grown on an Si substrate (101) by a UHV-CVD method, and B2H6 is used as a boron B material gas being an impurity (dopant) to complete an in-situ doping. Then, the layer (102) is heat-treated to form a B-doped Si1-x-y Gex Cy crystal layer (103); a heat-treating temperature at this time is preferably 700-1020°C and more preferably 900-1000°C.</p> |
