| 发明名称 |
Application of excimer laser anneal to DRAM processing |
| 摘要 |
Excimer laser annealing is employed to improve the flexibility of gate activation and source/drain activation as well as to limit the extent of decomposition of a high dielectric constant storage capacitor in fabricating trench storage semiconductor memory devices.
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| 申请公布号 |
US6297086(B1) |
申请公布日期 |
2001.10.02 |
| 申请号 |
US19990266337 |
申请日期 |
1999.03.11 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
HEGDE SURYANARAYAN G.;LEE KAM LEUNG;MANDELMAN JACK A.;RADENS CARL J. |
| 分类号 |
H01L21/8242;(IPC1-7):H01L21/824 |
主分类号 |
H01L21/8242 |
| 代理机构 |
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| 主权项 |
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