Damascene local interconnect process

摘要

The present invention discloses a novel damascene local interconnect process to avoid junction leakage caused by poor interface of the interconnection with isolation edges. The process comprises the steps of: (a) forming a first dielectric layer over the substrate surface; (b) forming an interconnection in the upper level of the dielectric layer which spans over the first and second active areas; (c) forming a second dielectric layer over the first dielectric layer and the interconnection; (d) etching first and second contact holes adjacent to the opposite ends of the interconnection through the second and first dielectric layers, the first and second contact holes extending down to the first and second active area respectively; and (e) filling the first and second contact holes with first and second conductive plugs respectively, wherein the interconnection thereby connects the first and second conductive plugs to couple the first and second active areas.