Cell block structure of nonvolatile ferroelectric memory

摘要

Cell block structure of a nonvolatile ferroelectric memory is provided that can reduce loading on a bitline and simplify sense amplifier block arrangement and design. The nonvolatile ferroelectric memory can include a cell array block having split wordlines controlled by a wordline driver and a cell block selection switching unit that separates the cell array block into a first region and a second region. Each switch in the cell block selection switching unit is selectively coupled to a bitline for the first region and a bitline for the second region. First and second sense amplifier arrays sense a data from a cell array either in the first region or the second region selected by the cell block selection switching unit.