发明名称 METHOD FOR GROWING THREE-DIMENSIONAL STRUCTURE CRYSTAL
摘要 PROBLEM TO BE SOLVED: To provide a method for growing a high-quality three-dimensional structure crystal having cavities inside. SOLUTION: This method for growing a three-dimensional structure crystal is characterized in that the method comprises a process for forming a crystal growth prevention film on a substrate, a process for selectively removing a part of the crystal growth prevention film and further selectively removing a part of the substrate to form channels having a depth of a fixed value or higher than it and a process for bringing a crystal constitutent material into contact with the substrate, growing a crystal from the side of the substrate having the channels and forming a three-dimensional structure crystal in a hollow state in spaces between the bottom of the substrate facing to the channels and the crystal.
申请公布号 JP2001270800(A) 申请公布日期 2001.10.02
申请号 JP20000085872 申请日期 2000.03.27
申请人 UNIV SHIZUOKA 发明人 HAYAKAWA YASUHIRO;KUMAKAWA SEIJI
分类号 C30B29/40;H01L21/208;H01L21/308;H01L31/02;H01L31/04;H01L33/30;H01S5/323 主分类号 C30B29/40
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