发明名称 |
METHOD FOR GROWING THREE-DIMENSIONAL STRUCTURE CRYSTAL |
摘要 |
PROBLEM TO BE SOLVED: To provide a method for growing a high-quality three-dimensional structure crystal having cavities inside. SOLUTION: This method for growing a three-dimensional structure crystal is characterized in that the method comprises a process for forming a crystal growth prevention film on a substrate, a process for selectively removing a part of the crystal growth prevention film and further selectively removing a part of the substrate to form channels having a depth of a fixed value or higher than it and a process for bringing a crystal constitutent material into contact with the substrate, growing a crystal from the side of the substrate having the channels and forming a three-dimensional structure crystal in a hollow state in spaces between the bottom of the substrate facing to the channels and the crystal. |
申请公布号 |
JP2001270800(A) |
申请公布日期 |
2001.10.02 |
申请号 |
JP20000085872 |
申请日期 |
2000.03.27 |
申请人 |
UNIV SHIZUOKA |
发明人 |
HAYAKAWA YASUHIRO;KUMAKAWA SEIJI |
分类号 |
C30B29/40;H01L21/208;H01L21/308;H01L31/02;H01L31/04;H01L33/30;H01S5/323 |
主分类号 |
C30B29/40 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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