| 摘要 |
PROBLEM TO BE SOLVED: To reduce surface defect by reducing the density of dislocation of a crystal layer in a process for forming a crystal layer of a nitride semiconductor using a lateral growth technology of seed crystal. SOLUTION: On a buffer layer 100a formed on a substrate 100, GaN:Si is grown to form a seed crystal 105. Since the inside of a reaction tube 1 is brought into pressurized state (1.6 atm), dislocation density of the seed crystal 105 itself is reduced as compared with a conventional method where a semiconductor is produced under reduced pressure. When a nitride semiconductor crystal is grown in the lateral direction from the seed crystal 105, dislocation density is also reduced directly above the seed crystal 105 as well as in a lateral growth region where dislocation is low originally resulting in a crystal layer 107 having reduced surface defect. Consequently, dislocation is also reduced in second nitride semiconductor layers 108-115 formed thereon. When the second nitride semiconductor layers 108-115 are formed under pressure, dislocation density is reduced furthermore and a highly reliable semiconductor laser having reduced defect is fabricated. |
