发明名称 READ ONLY SEMICONDUCTOR MEMORY
摘要 <p>PROBLEM TO BE SOLVED: To reduce the circuit scale of a read only semiconductor memory without using dummy cells. SOLUTION: This device is provided with a memory cell 1 storing information, a bit line 5 by which voltage is transferred in accordance with the storage information of a memory cell 1, a pre-charge circuit 3 for pre-charging the bit line 5, and a sense amplifier circuit 41 for deciding the storage information on the memory cell 1 by comparing the voltage VBIT of the bit line 5 with reference voltage VREF generated from the pre-charge circuit 3.</p>
申请公布号 JP2001266586(A) 申请公布日期 2001.09.28
申请号 JP20000073593 申请日期 2000.03.16
申请人 SHARP CORP 发明人 KAWAI TOMOYUKI
分类号 G11C17/18;G11C16/06;H01L27/10;(IPC1-7):G11C17/18 主分类号 G11C17/18
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