摘要 |
<p>PROBLEM TO BE SOLVED: To reduce the circuit scale of a read only semiconductor memory without using dummy cells. SOLUTION: This device is provided with a memory cell 1 storing information, a bit line 5 by which voltage is transferred in accordance with the storage information of a memory cell 1, a pre-charge circuit 3 for pre-charging the bit line 5, and a sense amplifier circuit 41 for deciding the storage information on the memory cell 1 by comparing the voltage VBIT of the bit line 5 with reference voltage VREF generated from the pre-charge circuit 3.</p> |