| 摘要 |
PROBLEM TO BE SOLVED: To restrain the leakage current caused, i.e., by the ion diffusion in an embedded layer for forming an overflow barrier in the deep part of a semiconductor layer. SOLUTION: This device comprises a first N-type epitaxial growth layer 112 on an N-type substrate 110, a P-type embedded layer 14 on the upper part of the layer 112 and further a second N-type epitaxial growth layer 116 over the l layer 114. A leakage current prevention part 150 formed of an N-type layer is arranged in a non-doped region of the epitaxial growth layer 112 adjacent to the P-type embedded layer 114 in the substrate surface direction. This leakage current prevention part 150 prevents leakage from a P-type diffusion layer 140, communicating with a ground terminal part GND via an intermediate P-type diffusion layer 142, the P-type embedded layer 114 formed by ion implantation, the epitaxial growth layers 112, 116 of a non-doped region adjacent to the P-type buried layer 114 to other terminal parts, i.e., a source terminal part SUB.
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