| 摘要 |
PROBLEM TO BE SOLVED: To provide a group III nitride-based compound semiconductor in which through dislocations are suppressed. SOLUTION: Steps of a first group III nitride-based compound semiconductor layer 31 are formed by etching in a shape of islands, such as point-shaped, stripe-shaped or lattice-shaped, so that a layer this is different from the first group III nitride-based compound semiconductor layer 31 is exposed in the bottom parts of the steps. A second group III nitride-based compound semiconductor 32 is grown by transverse epitaxy to bury the stepped parts, and can also be grown upward thereafter, wherein the upper face of the upper steps and the side faces of the steps are utilized as the nuclei for the growth. In this occasion, upper section of the second group III nitride-based compound semiconductor 32 grown by transverse epitaxy can be a region where propagation of the through dislocations that are present in the first group III nitride- based compound semiconductor layer 31 is suppressed. |
