| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide the contact structure of wiring that is made of a low- resistance material and at the same time has low-resistance contact characteristics, its formation method, a thin-film transistor substrate that includes the contact structure of wiring having the excellent contact characteristics, and its manufacturing method, and to simplify the manufacturing method of the transistor substrate. SOLUTION: This method for forming the contact structure of the wiring includes a step that forms the wiring by metal at the upper part of the substrate, a step that laminates an inorganic insulating film for covering the wiring, a step that performs a heat treatment process, a step that allows the inorganic insulating film to be subjected to patterning to form a contact hole for exposing the wiring, and a step that forms a conductive layer that is electrically interlocked to the wiring.</p> |
