| 摘要 |
PROBLEM TO BE SOLVED: To realize a plasma fitted to processing over a wide parameter area through the use of the high frequency of VHF or UHF band and a magnetic field and of a plasma generation system. SOLUTION: A plasma processor is provided with a vacuum vessel, a processing chamber which is in the vacuum vessel and to which gas is supplied, a support electrode which is installed in the processing chamber and supports the object of the processing, a high frequency introducing means supplying high frequency of UHF or VHF band to the processing chamber and a magnetic field forming means forming a magnetic field in the processing chamber. The high frequency introducing means is provided with an antenna, having a groove or a step on the surface of a side facing the object of the processing. Thus, the plasma processor, realizing a highly uniform plasma of high density over a wide parameter area can be supplied in a system for generating plasma by using the high frequency of the VHF or UHF band and the magnetic field. |
