FINE PATTERN FORMING METHOD

摘要

PROBLEM TO BE SOLVED: To eliminate the limits existing heretofore in describing the position distortion generated in an exposure process and the position distortion quantity in a mask manufacturing process with one polynominal over the entire surface of a chip. SOLUTION: A reference point is set on a mask and the position distortion quantity is predicted with high accuracy. The position distortion quantity at an arbitrary point on the mask is then predicted from only the distortion of the reference point. Layout data 110 and 112 of patterns and position measuring mark patterns are inputted and EB data 116 with the position measuring mark patterns is outputted by using EB data processing software 114 and mispositioning information 128 is obtained by mispositioning measurement 126 of the pattern 124 formed on the mask 122 through an EB exposure 118 and a working process 120. On the other hand, EB data 132 is formed and EB data 136 subjected to position correction through pattern mispositioning correction 134 of the EB data 132 by using the position information 128. The mask 142 is completed through the EB exposure 138 and the working process 140.