发明名称 RF POWER AMPLIFIER AND ITS IMPROVEMENT
摘要 PROBLEM TO BE SOLVED: To provide an improved RF power amplifier capable of directly driving a switching transistor(TR). SOLUTION: An RF oscillator 20' supplies an RF signal showing the RF period of fixed frequency and constituting each positive pulse of a train of an RF pulse of a rectangular wave having fixed size and fixed width. The RF pulse is supplied to a one-shot circuit 200 and supplied to a 2nd one-shot circuit 240 through an inverter 202. These RF pulses are converted into rectangular wave signals of bridge phase A, or B and supplied to plural power amplifiers PA1 to PAN. The signals of the bridge phase A or B have inter-pulse dead time DT and these phases are different from each other by 18 deg.. Each of the amplifiers PA1 to PAN has a MOSFET TR and a buffer amplifier of a driving circuit. Power is supplied from a synchronizing isolation RF driving power supply (SIPS) to each amplifier.
申请公布号 JP2001267856(A) 申请公布日期 2001.09.28
申请号 JP20010012341 申请日期 2001.01.19
申请人 HARRIS CORP 发明人 LUU KY THOAI
分类号 H03F3/68;H03F3/217;H03F3/72;(IPC1-7):H03F3/217 主分类号 H03F3/68
代理机构 代理人
主权项
地址