TRANSPARENT ELECTRODE AND ITS PATTERNING METHOD AND METHOD OF MANUFACTURING SEMICONDUCTOR ELEMENT USING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a method of patterning a transparent electrode without suffering from thermal damage and insulation failure even when a ZnO film is used. SOLUTION: An ITO film 2 is formed on a translucent substrate 1 by means of a sputtering method and a ZnO film 4 is then formed on the ITO film 3 by means of the sputtering method. An Nd:YAG laser beam is then irradiated. An irradiated area of the ITO film 3 and the ZnO film 4 is then removed for patterning.