| 摘要 |
PROBLEM TO BE SOLVED: To provide a process for manufacturing a power MOSFET, which can be used also as a process for forming a peripheral element at the formation the power MOSFET and the peripheral element. SOLUTION: At the time of forming an n--type drift area 1c and a p-type base region 2 and an n+-type source region 3, an n--type well layer 11 and a p-type base region 12 and an n+-type region 13 are also formed at the time same. Also, at the formation of a trench 5, trenches 14 and 15 are also formed, and at carrying out thermal oxidation for forming a gate oxide film 6, a gate oxide film 16 and a gate oxide film 18 are formed, and at the formation of a gate electrode 7, a gate electrode 17 is formed at the same time. Thus, a process for manufacturing a power MOSFET can be used also as a process for manufacturing a peripheral element, and a process for manufacturing a semiconductor device can be simplified.
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