SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE THEREOF

摘要

A semiconductor device comprises a first transistor (38a) with a first gate electrode (22); a second transistor (38b) with a second gate electrode (34) different from the first gate electrode; an insulating film (28) formed between the first gate electrode and the second gate electrode; and a connection electrode (44) adapted to electrically connect the first gate electrode and the second gate electrode and buried in a recess (42) formed through the first gate electrode, the second gate electrode and the insulating film. Since the first gate electrode and the second gate electrode are electrically connected by means of the connection electrode buried in the recess formed through the first gate electrode, the second gate electrode and the insulating film, the semiconductor device has high reliability.