| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit device where a dummy pattern is formed and a data rate can be adjusted, without having to generate parasitic capacitance in an internal region. SOLUTION: A semiconductor integrated circuit device, which has a multilayer wiring structure constituted of plural wiring layers and in which a pad 11 is arranged at the periphery of an internal region in the center of a chip surface 10a, is provided with a dummy pattern 13 in a layer, which excludes the inner area and from which a metal layer constituting the pad is removed. |
