| 摘要 |
An active matrix semiconductor device is provided which is free of unevenness in image. The analog switch and buffer in a drive circuit are structured by a plurality of parallel-connected analog switches and buffers each formed by a TFT with a small channel width. The carrier moving direction of these TFTs are oblique relative to a scanning direction of a linear laser used for laser crystallization. By doing so, the analog switch and the buffer are decreased in characteristic variation with deterioration suppressed. Thus an active matrix semiconductor device is realized which is free of unevenness in image.
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