| 摘要 |
A first part (S/D1a) of a first source/drain region (S/D1) is disposed on at least one flank of a semiconductor structure (St) and on at least one peripheral region of a surface (OH), bordering the flank, of the semiconductor structure (St). A dimension of the first part (S/D1a) of the first source/drain region (S/D1) perpendicular to the flank is less than an analogous dimension of the semiconductor structure (St) and than the minimum feature size that can be made by the technology used. For the production, a mask that is used to create the semiconductor structure (St) can be reduced in size for the implantation of the first part (S/D1a) of the first source/drain region (S/D1). To make it easier to create a contact (K1) of the first source/drain region (S/D1), a second part (S/D1b) of the first source/drain region (S/D1) can be disposed in an inner region of the surface (OH) of the semiconductor structure (St). A dimension of the second part (S/D1b) of the first source/drain region (S/D1) perpendicular to the surface (OH) of the semiconductor structure (St) is smaller than an analogous dimension of the first part (S/D1a) of the first source/drain region (S/D1).
|
