| 摘要 |
<p>A power semiconductor device of the present invention comprises a voltage drive type power MOS transistor (11), a series connection of a first resistor (R1) and Zener diode (14), a second resistor (R2), and a series connection of a third resistor (R3) and MOS transistor (15). The power MOS transistor (11) has a gate, source and drain. A drain-to-source voltage of the power MOS transistor (11) is applied across the series connection of the first resistor (R1) and Zener diode (14). A gate-to-source voltage of the power MOS transistor (11) is applied across the second resistor (R2). The gate-to-source voltage of the power MOS transistor (11) is applied across the series connection of the third resistor (R3) and MOS transistor (15). The MOS transistor (15) has a gate, source and drain. The gate of the MOS transistor (15) is connected to a node between the first resistor (R1) and the Zener diode (14).</p> |
