| 摘要 |
PROBLEM TO BE SOLVED: To provide a CVD method capable of improving productivity as well as improving the deposition rate of a material layer on a substrate, and a CVD system used for its implementation. SOLUTION: A material gas is allowed to flow through a reaction tube 5 while making its flow passage coincide with the vertical direction, and the substrates 1 and 1 are disposed in such a way that respective plain surfaces face each other with the flow passage in-between. A heater 2 is disposed between the inner wall of the reaction tube 5 and the substrate 1 and 1, and a heat insulating material 7 is disposed so that it encloses the heater 2. Further, the substrates 1 and 1 are subjected to loose fit in the central part, respectively, and partition plates 6 for preventing the diffusion of the the material gas into the heater 2 are disposed in a manner to be opposed to the flow passage of the material gas.
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