发明名称 |
Method for forming an isolation region |
摘要 |
Forming an insulating region (14) surrounding an active region (12) in a semiconductor substrate (10) involves forming a trench surrounding the active region in the substrate, filling the trench with a first material so as to create a protruding insulating zone that forms a peripheral edge around the active region, and beveling the edge of insulating region at the periphery of the active region. An Independent claim is given for a semiconductor device comprising a semiconductor substrate (10) and at least one insulating region (14) surrounding an active region (12) which is formed by the invented process. |
申请公布号 |
EP1137062(A1) |
申请公布日期 |
2001.09.26 |
申请号 |
EP20010201018 |
申请日期 |
2001.03.19 |
申请人 |
KONINKLIJKE PHILIPS ELECTRONICS N.V.;STMICROELECTRONICS S.A. |
发明人 |
INARD, ALAIN;ZULIAN, DOMINIQUE;LEVY, DIDIER;LUNENBORG, MEINDERT;DE COSTER, WALTER;OBERLIN, JEAN-CLAUDE |
分类号 |
H01L21/76;H01L21/306;H01L21/3105;H01L21/311;H01L21/762;H01L21/8242;H01L27/08;H01L27/108;H01L29/78 |
主分类号 |
H01L21/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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