| 摘要 |
PROBLEM TO BE SOLVED: To obtain a system by which a thin film having the same composition as that of a target material can be grown, and a thin film excellent in quality can be grown. SOLUTION: In this system in which gas is introduced into the inside of a reaction vessel 1 to hold the pressure to the low one, high voltage is applied on the space between a substrate 5 and a target 7 arranged oppositely to generate plasma, and the atomic target material scattering in the case cations in plasma are collided against the target 7 is deposited on the substrate 5 to form a thin film, the back of the target 7 is provided with a magnet device in which a generated magnetic field distribution controlling function is imparted, and the magnetic field is formed on the space between the substrate 5 and the target 7.
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