| 摘要 |
A method of metallization wherein particle issues are avoided during pre-metal cleaning by the use of a unique IMD scheme is described. A semiconductor substrate is provided which may include semiconductor device structures. An etch stop layer is deposited overlying the semiconductor substrate. A low-dielectric constant material layer is deposited overlying the etch stop layer. A polish stop layer is deposited overlying the low-dielectric constant material layer. An oxide layer is deposited overlying the polish stop layer. An anti-reflective coating (ARC) layer is deposited overlying the oxide layer. An opening is etched through the ARC layer, oxide layer, polish stop layer, and low-dielectric constant material layer where they are not covered by a mask. The mask is removed during the etch. The etch stop layer is etched through within the opening whereby the ARC layer is removed. The opening is cleaned using an Argon sputtering method. Since the topmost layer of the IMD layer is an oxide layer, particles are not generated from this topmost layer. The opening is filled with a metal layer to complete metallization in the fabrication of an integrated circuit device.
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