| 摘要 |
In the test, the semiconductor memory device capable of error correction is tested to judge whether or not errors which exceed the correction ability of the error correction occur in the memory section of the device. As a result of the test, the semiconductor memory device in question is judged normal when errors occurring therein do not exceed the correction ability. The device subjected to the test is determined not to have any serious problem, even if it includes any errors, since such errors are always corrected by error correction of the device. Thus, according to this invention, the yield of the semiconductor memory device drastically can increase.
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