Production of an epitaxial layer on a single crystalline substrate comprises heating a purified substrate in an epitaxy device while introducing organometallic precursors and a nitrogen-containing gas at a specified flow rate

摘要

Production of an epitaxial layer of a group III nitride on a single crystalline substrate comprises purifying the substrate; placing in an epitaxy device; and heating to a suitable temperature while introducing organometallic precursors containing one or more group III elements and a nitrogen-containing gas at a specified flow rate. An Independent claim is also included for a device for producing multiple layers comprising a rotating reaction support (20) having a hollow shaft (29), a rotating shaft (290), a graphite support, a cover (24) and rotating troughs (28). Preferred Features: The single crystalline substrate is made from wafers of Al2O3, Si, Ge, GaAs, GaP or SiC. The nitrogen-containing gas is NH3.