| 摘要 |
PROBLEM TO BE SOLVED: To provide the polishing method of wafers that can prevent excessive polishing (outer-periphery sagging) of the outer periphery of the wafer, and can perform polishing with high degree of glanarization. SOLUTION: This polishing method of wafers includes a deposition process that forms a protection film 4 on a backside 3 of a wafer 1, a first etching process that removes an outer periphery 4p of the protection film 4 by etching and forms a step surface 1g between a backside outer periphery 3p that is exposed by the removal and a remaining protection film 4m, a one-side polishing process that allows only a surface 2 of the wafer 1 to be subjected to mechanochemical polishing, and a second etching process that removes the remaining film 4m by the etching.
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