METHOD FOR FORMING SHALLOW JUNCTION OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a shallow junction of a semiconductor device is provided to prevent diffusion of boron ions by performing a spike thermal process. CONSTITUTION: A field oxide layer is formed on a field region of a semiconductor substrate. A gate oxide layer is formed on the semiconductor substrate. A gate is formed by depositing and etching a polysilicon layer on the gate oxide layer. An insulating layer spacer is formed at a side of the gate. A photoresist layer is applied on the substrate. A photoresist layer pattern is formed by patterning the photoresist layer. A drain/source region(16a) having a shallow junction is formed by implanting boron ions. A carbon region(17) is formed on the drain/source region by implanting carbon ions. A spike thermal process is performed to activate boron, recover a damage of a grating, and prevent a diffusion of the boron ions.