| 摘要 |
PROBLEM TO BE SOLVED: To realize improvement in accuracy of a gate pattern, the reduction of a gate capacity and restraint of damages caused due to recess etching and the variability in a threshold by realizing the uniformity in level of the adjacency of a gate of the compound semiconductor device in the compound semiconductor equipment by eliminating the difference in level of the adjacency of the gate, as well as providing the constitution which functions the same as a recess. SOLUTION: This equipment is provided with a source electrode 28 and a drain electrode 29, which are formed in contact with an oxide In conductive layer 27 arranged selectively on an N-InAlAs electron supply layer 24, and a gate electrode 34 which is formed directly in contact with the N-InAlAs electron supply layer 24.
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