| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device made by forming a capacitive element, having a high breakdown voltage on a semiconductor substrate. SOLUTION: On an embedded oxide film 11 of a SOI substrate, first and second semiconductor patterns 14, 15 having an interdigital shape are disposed face to face with each other through a trench 12. An oxide film 13, filling the trench 12, is a dielectric material. Thereby, the semiconductor device provided with the capacitive element, having a large opposite area, large capacity, and large withstand voltage can be realized.
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