发明名称 NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE PERMITTING DATA-READ OPERATION PERFORMED DURING DATA-WRITE/ERASE OPERATION
摘要 PURPOSE: A non-volatile semiconductor memory device permitting data-read operation performed during data-write/erase operation is provided to perform a read/erase operation at the same time, and to supply the availability of read-out data to the external device of a semiconductor device. CONSTITUTION: A non-volatile semiconductor memory characterized by comprising: a plurality of memory areas(11, 21); a control unit(33) which performs a data-write or data-erase operation with respect to one of the memory areas(11, 21); an address-detection unit(51) which detects an address that indicates the one of the memory areas(11, 21) having the data-write or data-erase operation performed therein, and supplies information indicative of the address; and at least one output terminal(61,62) which supplies the information to an exterior of the device. The non-volatile semiconductor memory is characterized in that the at least one output terminal(61, 62) is a terminal dedicated for a purpose of outputting the information supplied from the address-detection unit(51). The non-volatile semiconductor memory is characterized by further comprising a selector unit which selects either the information supplied from the address-detection unit(51) or other information, wherein the at least one output terminal(61, 62) supplies the selected information selected by the selector unit to the exterior of the device.
申请公布号 KR20010087733(A) 申请公布日期 2001.09.21
申请号 KR20000015453 申请日期 2000.03.27
申请人 FUJITSU LIMITED 发明人 KITAZAKI KAZUHIRO
分类号 G11C16/12;G11C16/08;G11C16/10;G11C16/26;(IPC1-7):G11C16/12 主分类号 G11C16/12
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