| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor substrate and its manufacturing method in which the adhesion of particle is suppressed and marking is eased. SOLUTION: In a semiconductor substrate provided with a semiconductor layer 3 which is provided on the upper side with an insulation layer 2 interposed, a mark 4 is formed in an area other than the surface area of the semiconductor layer 3. Specifically, a first substrate is prepared, and a mark is formed in the peripheral part of a second substrate, and then the first and second substrates are adhered with each other in such a manner that the marked parts are not adhered, and the unnecessary part of the first substrate is removed, thereby moving a moving layer of the first substrate to form an SOI substrate.
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