| 摘要 |
PROBLEM TO BE SOLVED: To provide a wiring machining method that can accurately carry out taper machining. SOLUTION: A metal thin film 14 made of the alloy of molybdenum and tungsten is deposited by sputtering. An oxide film 15 is formed on the surface of the metal thin film 14. After the surface of the oxide film 15 of the metal thin film 14 is washed before applying resist, a resist film 16 is formed. The resist film 16 is subjected to pattern exposure in a photolithography process, alkaline development is made by alkaline liquid, the resist film 16 and the internal oxide film 15 are isotropically fused for removing, and a mask 17 is formed. The metal thin film 14 is subjected to reactive ion etching treatment, pattern formation being faithful to the mask 17 is carried out by the ion etching, isotropic etching of a radical is utilized for advancing the etching from the gap between the mask 17 and the metal thin film 14, and the sectional shape of a gate electrode 18 is tapered.
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