| 摘要 |
PURPOSE: A double exposure method for reducing overlay is provided to prevent the generation of overlay in an exposure process by using a double exposure method. CONSTITUTION: A mask is loaded. A reticle is aligned on a wafer stage. A wafer applied with a photoresist is loaded on the wafer stage. The wafer applied with the photoresist is aligned according to a position of the reticle. The first exposure process is performed by opening a part of the loaded mask corresponding to the first mask. The wafer stage is shifted as much as the part corresponding to the first mask. The second exposure process is performed by opening a part of the loaded mask corresponding to the second mask.
|
