| 摘要 |
PROBLEM TO BE SOLVED: To actualize a method for manufacturing a large-area group-III nitride semiconductor substrate of high quality which has no crack. SOLUTION: The manufacturing method for the semiconductor substrate includes (a) a stage where group-III nitride 101 is formed by nitrifying a 1st substrate 100 having at least its top surface made of a group-III-V compound and nitrogen for group-V elements of the group III-V compound are substituted, (b) a stage for the crystal growth of at least one layer of a group-III nitride semiconductor 102 on the mentioned group-III nitride 101, and (c) a stage where the crystal-grown group-III nitride semiconductor 102 is separated from the 1st substrate 100 in the area of the mentioned group-III nitride; and the crystal growth of the group-III nitride semiconductor film is carried out on the group-III nitride, so the large-area group-III nitride semiconductor substrate having no crack can be manufactured. |
