| 摘要 |
PROBLEM TO BE SOLVED: To solve a problem that a propagation delay occurs in a signal in a high-frequency domain due to a large relative dielectric constant of an insulating substrate, by which higher-speed data processing cannot be responded. SOLUTION: This semiconductor device is constructed by covering an insulating substrate 1 on which a semiconductor element 3 is mounted with a mold resin 7. The insulating substrate 1 is composed of 20-80 volume % of glass containing 5-60 weight % of BaO and having a yielding point of 400-800 deg.C and 20-80 volume % of a filler composed of at least one kind selected from quartz, cristobalite, tridymite and enstatite. The substrate is formed by a glass ceramic sintered body with a relative dielectric constant of 6 or lower that contains 0.1-30 weight % of ZrO2 in a Zr compound in the glass and/or the filler. |
