| 摘要 |
PROBLEM TO BE SOLVED: To provide a drive circuit for a non-volatile ferroclectric memory in which destruction of cell data caused by variation of system voltage is prevented and a drive method for the memory device. SOLUTION: This device is constituted so that an internal chip control signal ICC is clamped to a low level and operation of memory cells are stopped when system voltage is low voltage, (i.e., b section, c section) by providing a means sensing variation of system voltage.
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