发明名称 OPTICAL SEMICONDUCTOR MEMORY
摘要 PROBLEM TO BE SOLVED: To spatially separate holes generated in quantum dots in an optical semiconductor memory from electrons to the extent that their recombination do not occurs. SOLUTION: The optical semiconductor memory has at least a laminated structure composed of a first semiconductor layer 4, a second semiconductor layer 2, a barrier layer 3 and quantum dots 1 laminated one above the other, the quantum dots 1 are used as holders for electrons 7 and the second semiconductor layer 2 is used as acceptors for holes 8 generated in the quantum dots 1.
申请公布号 JP2001257321(A) 申请公布日期 2001.09.21
申请号 JP20000068092 申请日期 2000.03.13
申请人 FUJITSU LTD 发明人 YAMAGUCHI MASAOMI;NAKADA YOSHIAKI;SUGIYAMA YOSHIHIRO
分类号 H01L29/06;H01L27/10;(IPC1-7):H01L27/10 主分类号 H01L29/06
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