METHOD FOR PERFORMING THERMAL PROCESS OF SILICON SUBSTRATE UNDER HIGH TEMPERATURE

摘要

PURPOSE: A method for performing a thermal process of a silicon substrate under a high temperature is provided to form deeply a denuded zone by performing a denudation process after forming a thick buffer oxide on a wafer. CONSTITUTION: A buffer oxide layer is formed on a wafer. A denudation process for the wafer is performed during one to four hours under an N2 atmosphere, a temperature range of 1000 to 1100 degrees centigrade, and an N2 pressure of 600 to 900 Torr. The denudation process is performed under the N2 atmosphere since a nitride layer is not formed on a surface of the wafer by performing the denudation process as a thermal process of a high temperature.