发明名称 |
Memory repair circuit using antifuse of MOS structure |
摘要 |
A memory repair circuit uses an antifuse of MOS structure, capable of repairing defective cells by constructing the antifuse by MOS transistors and programming the antifuse circuit properly. The memory repair circuit comprises a plurality of antifuse devices, each programmed when a power voltage and a negative voltage are supplied respectively to a first electrode and a second electrode thereof; a latch for detecting and latching program states of the antifuse devices; and a redundancy block for replacing a defect cell with a redundancy cell depending on the output of the latch.
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申请公布号 |
US2001022746(A1) |
申请公布日期 |
2001.09.20 |
申请号 |
US20000737871 |
申请日期 |
2000.12.18 |
申请人 |
KIM PHIL-JUNG;WEE JAE-KYUNG;LEE CHANG-HYUK;SEOL YOUNG-HO;OH JIN-KEUN;CHO HO-YOUB |
发明人 |
KIM PHIL-JUNG;WEE JAE-KYUNG;LEE CHANG-HYUK;SEOL YOUNG-HO;OH JIN-KEUN;CHO HO-YOUB |
分类号 |
H01L27/04;G11C17/18;G11C29/00;G11C29/04;H01L21/82;H01L21/822;H01L27/10;(IPC1-7):G11C7/00 |
主分类号 |
H01L27/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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