发明名称 POLYMER FOR CHEMICALLY AMPLIFIED RESIST AND A RESIST COMPOSITION USING THE SAME
摘要 The present invention relates to a polymer for a chemically amplified resist and a resist composition using the same. The present invention provides a polymer represented by the formula (1) and a chemically resist composition for extreme ultraviolet light comprising the same. The chemically amplified resist composition comprising the polymer represented by the formula (1) of the present invention responds to mono wavelength in a micro-lithography process and can embody a micro-pattern of high resolution on a substrate.
申请公布号 WO0118603(A3) 申请公布日期 2001.09.20
申请号 WO2000KR00956 申请日期 2000.08.25
申请人 DONGJIN SEMICHEM CO., LTD.;KIM, DEOG-BAE;KIM, HYUN-JIN;CHOI, YONG-JOON;CHUNG, YOON-SIK 发明人 KIM, DEOG-BAE;KIM, HYUN-JIN;CHOI, YONG-JOON;CHUNG, YOON-SIK
分类号 C08F212/14;C08F220/10;G03F7/004;G03F7/039;H01L21/027 主分类号 C08F212/14
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