| 摘要 |
In a semiconductor memory capable of verifying data stored therein, a verification pass signal output from a verification circuit is input to a control signal output circuit. In the case of a normal mode operation of the control signal output circuit, a signal having a voltage level corresponding to that of the verification pass signal is output therefrom. In the case of a test mode operation of the control signal output circuit, a signal having a given voltage level regardless of voltage level of the verification pass signal is output therefrom. In cases where the signal having the given voltage level is output from the control signal output circuit, a write control circuit and a write counter execute a preset maximum number of program processings and verifications processing.
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