Semiconductor photonic device having a ZnO film as a buffer layer and method for forming the ZnO film

摘要

A semiconductor photonic device contains a substrate: a ZnO buffer layer; and a compound semiconductor layer represented by InxGayAlzN (where x+y+z=1, 0<=x<=1, 0<=y<=1, and 0<=z<=1), wherein the ZnO buffer has a thickness of about 3,500 Å or more and is aligned in a c-axis direction.