| 摘要 |
A non-volatile memory device includes: a plurality of memory cell arrays including a plurality of blocks, each block including a matrix of memory cells coupled to one another via word lines and bit lines such that corresponding ones of the word line in the plurality of blocks of each memory cell array are coupled to a common, the word lines being commonly driven by decoders respectively provided for the memory cell arrays, where all data stored in each block is subject to erasure in one erase operation, the non-volatile memory device further including: a plurality of sense amplifiers for reading data from the memory cells; and a control circuit for simultaneously performing a plurality of operations by using the plurality of sense amplifiers.
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